| , lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 repetitive avalanche and dv/dt rated hexfet'transistors thru-hole (to-204aa/ae) IRF460 500v, n-channel product summary part number IRF460 bvdss 500v rds(on) 0.27i2 id 21 the hexfet transistors also feature all of the well estab- lished advantages of mosfets such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? hermetically sealed ? simple drive requirements ? ease of paralleling absolute maximum ratings id @ vgs = ov, tc = 25c id @ vgs = ov, tc - iooc idm pd @ tc - 25c vgs has iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current IRF460 electrical characteristics @ tj = 25c (unless otherwise bvdss abvdss/atj rds(on) vgs(th) gfs idss igss igss g oas q-kd 'd(on) tr td(ofr) tf ls + ld ciss coss crss parameter drain-to-source breakdown voltage temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charge gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance min 500 ? 2.0 13 ? ? ? 84 12 60 ? ? ? ? -- ? typ ? 0.78 ? ? ? ? ? ? ..__ ? ? ? ? 6.1 4300 1000 250 max ? ? 0.27 0.31 4.0 25 250 100 -100 190 27 135 35 120 130 98 ? ? specified) units v v/c il v s i5v, ids= i4a ? vds=400v,vos=ov vds =40ov vgs = ov,tj= i25c vqs = 2ov vgs = -2ov vgs^ 10v, id=2ia vds = 250v vdd -"250v, id =21 a, rg =2.35h measured from drain lead (6mm/0-25in. from package) lo source lead (6mm/0.25in. from package) vgs = ov, vds = 2sv f = l.omhz source-drain diode ratings and characteristics is ism vsd trr qrr 'on parameter continuous source current (body diode) pulse source current (body diode) |
